NTE5424 Silicon Controlled Rectifier (SCR) for TV Power Supply Switching
Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high-speed switching applications such as power inverters, switching regulators, and high-current pulse applications. This device features fast turn-off, high dv/dt, and high di/dt characteristics and may be used at frequencies up to 25kHz. Features: D Fast Turn-Off Time D High di/dt and dv/dt Capabilities D Shorted-Emitter Gate-Cathode Construction D Low Thermal Resistance D Center-Gate Construction Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (Gate Open, Note 1), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RMS On-State Current (TC = +60C, t1/t2 = 0.5), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A Average On-State Current (TC = +60C, t1/t2 = 0.5), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A Peak Surge (Non-Repetitive) On-State Current (One Cycle), ITSM 60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A Peak Forward Gate Power Dissipation (10s max, Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . 13W Peak Reverse Gate Power Dissipation (10s max, Note 2), PRGM . . . . . . . . . . . . . . . . . . . . . . . 13W Average Gate Power Dissipation (10ms max, Note 2), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Rate of Change of On-State Current VDM = 400V, IGT = 500mA, tr = 0.5s), di/dt . . . . . . . 200A/s Fusing Current (TC = +60C, 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26A2s Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Lead Temperature (During Soldering, 10sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +225C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2C/W Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
Electrical Characteristics: (TC = +25C, "Maximum Ratings" unless otherwise specified)
Parameter Peak Forward Blocking Current Peak Reverse Blocking Current Forward ON Voltage Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC DC Holding Current Rate of Rise of Off-State Voltage Turn-On Time Circuit Commutated Turn-Off Time Symbol IDRM IRRM VTM IGT VGT IH dv/dt tgt tq VD = 400V, TC = +80C VD = 400V, IT = 8A (Peak), IGT = 300mA, tr = 0.1s VD = 400V, Pulse Duration = 50s, dv/dt = 100V/s, -di/dt = -10A/s, IGT = 100mA at turn-on, IT = 4A, VGK = 0V at turn-off, TC = +75C Test Conditions VD = 400V, TC = +100C VR = 400V, TC = +100C ITM = 30A Anode Voltage = 12V, RL = 30 Anode Voltage = 12V, RL = 30 Min - - - - - - 100 - - Typ 0.5 0.3 2.34 - 1.2 20 250 0.7 4.4 Max 3.0 1.5 4.0 50 2.5 50 - - - Unit mA mA V mA V mA V/s s s
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Cathode .100 (2.54) Gate Anode/Tab
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